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Abstract
Bulk crystals of CuInSe 2 (CIS) were grown by vacuum fusion technique with specific proportions of Cu, In and Se. The studied samples, cut from the central part of the ingots, were first characterised by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The conductivity of the crystals was investigated by using a contactless technique based on hyper-frequency microwave. The method consisted in measurements made in a rectangular resonance cavity at 9192 MHz. Conductivity has been also measured by conventional Van der Paw method and the values obtained, varied in the range [3.10 − 3 –7.10 − 3 ]Ω − 1 cm − 1 , didn't show significant discrepancies between the two techniques.
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