Abstract
The electrostatic behaviour of the different configurations of n-type heterojunction double-gate tunnel field-effect transistor (HDGTFET) has been analysed. The analysis is based on the basics of the circuit elements such as drain current, transconductance, parasitic capacitances, cut-off frequency and gain bandwidth product. From the investigation carried out, it can be inferred that dual metal hetero-dielectric double-gate HDGTFET with gate underlap achieves both low standby power OFF state current and high performance at low supply voltage. The performance of the device having different configurations has been analysed for drain region having a uniform and Gaussian doping profile.
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