Abstract
The pressure dependence of electrical properties of ZnSe was observed by means of in situ high pressure DC electrical resistivity measurement and AC impedance spectrum methods in a range of 0–35 GPa. Two structure phase transitions have been observed corresponding to the wurtzite-cinnabar-rocksalt transitions. The temperature dependence of the electrical resistivity of ZnSe is measured under different pressures. Results show that ZnSe undergoes a semiconductor to metal transition at 12 GPa. AC data also proves the above results. The pressure dependence of grain and grain boundary resistances indicates that the cinnabar is close to an isotropic material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
