Abstract
Abstract A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. For an n-channel device, the structure consists of a thin n-type layer on a p-type substrate. By appropriate choice of the n-layer thickness and the donor and acceptor concentrations the n-layer can be completely depleted due to the built-in junction potential or if necessary by applying a suitable substrate bias. The DC current-voltage characteristics are calculated using the depletion approximation.
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