DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

Abstract

A broadband low-loss, ultra-low-power consumption transmit/receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented. The single pole double throw (SPDT) monolithic switch utilises a drain contact electrode sharing concept using a two-finger MHEMT. An optimal gate width of the MHEMT was chosen for low-loss, high-isolation performance and circuit compactness. The switch shows a broadband operation from DC to 35 GHz with insertion loss less than 1.9 dB, isolation better than 27 dB, and P 1dB better than 12 dBm with DC power consumption of less than 6 muW.