Abstract

This data article describes the detailed parameters for synthesizing mullite inverse opal photonic crystals via Atomic Layer Deposition (ALD), as well as the detailed image analysis routine used to interpret the data obtained by the measurement of such photonic crystals, before and after the heat treatment, via Ptychographic X-ray Computed Tomography (PXCT). The data presented in this article are related to the research article by Furlan and co-authors entitled “Photonic materials for high-temperature applications: Synthesis and characterization by X-ray ptychographic tomography” (Furlan et al., 2018). The data include detailed information about the ALD super-cycle process to generate the ternary oxides inside a photonic crystal template, the raw data from supporting characterization techniques, as well as the full dataset obtained from PXCT. All the data herein described is publicly available in a Mendeley Data archive “Dataset of synthesis and characterization by PXCT of ALD-based mullite inverse opal photonic crystals” located at https://data.mendeley.com/datasets/zn49dsk7x6/1 for any academic, educational, or research purposes.

Highlights

  • Dataset of ptychographic X-ray computed tomography of inverse opal photonic crystals produced by atomic layer deposition

  • The data include detailed information about the atomic layer deposition (ALD) super-cycle process to generate the ternary oxides inside a photonic crystal template, the raw data from supporting characterization techniques, as well as the full dataset obtained from Ptychographic X-ray Computed Tomography (PXCT)

  • All the data described is publicly available in a Mendeley Data archive “Dataset of synthesis and characterization by PXCT of ALD-based mullite inverse opal photonic crystals” located at https://data.mendeley.com/datasets/zn49dsk7x6/1 for any academic, educational, or research purposes

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Summary

Low-temperature atomic layer deposition super-cycle process

The ratio of Al2O3:SiO2 was estimated by using the individual compound growth per cycle (GPC) and reported films densities [2,3,4], and varied by the number of internal loops within the super-cycle (Table 1). The binary process of each individual loop was developed by deposition of films onto silicon wafers (as received, o100 4, native oxide layer, Si-Mat silicon materials), followed by thickness and refractive index measurements by spectroscopic ellipsometry (SENProTM, SENTECH Instruments GmbH) with a halogen lamp and a 70° incident angle. The super-cycles development was performed first by depositions made onto silicon wafers and later by infiltration of polystyrene templates generated by selfassembly. Deposition was performed onto BaF2 wafers (as received, o111 4, Crystal GmbH) to measure the chemical composition of the deposited films by EDX (not possible on the Si wafers or sapphire substrates due to the presence of Si, Al, and O atoms, which would invalidate the composition quantification). While TMA was kept at room temperature, diH2O, APTES, and TDMAS were heated up to 40 °C, 95 °C, and 40 °C, respectively.

PXCT samples’ preparation
PXCT measurements
Image post processing and analysis
Macro pores 3D quantification
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