Abstract
The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral Neel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/Co20Fe60B20/MgO the DMI may be influenced by annealing. We find that the DMI peaks at D=0.057 +/- 0.003 mJ/m2 at an annealing temperature of 230 DegC. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased.
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