Data on nitridation effect of AlTiTaZrHf(-N) high entropy films by X-ray photoelectron spectroscopy

Abstract

The data presented in this article are related to the published research of “Effect of nitrogen content on structural and mechanical properties of AlTiZrTaHf(-N) high entropy films deposited by reactive magnetron sputtering”. This database contains X-ray photoelectron spectroscopy (XPS) measurements, performed in order to determine the extents of nitrides formed in AlTiTaZrHf high entropy films. The latter were prepared by DC magnetron sputtering technique in reactive mode by adding the nitrogen to argon gas. The nitrogen flow rate is calculated by RN2 = N2/(N2+Ar). XPS measurements were done one month later. Oxides were detected on the top surface of the samples. 2p, 3d and 4f core level peaks were fitted in order to determine accurately the chemical composition of the nitride films. Al2p, Ti2p, Zr3d, Ta4f, and Hf4f reveal the formation of nitrides of all elements constituting the films. Atomic percentage of each element was calculated revealing an increase of nitrogen loading and decrease of the metallic fractions of the elements as RN2 grows from 5% to 50%. Nitridation behaviour of each element, as a function of the nitrogen flow rate, is investigated and presented.