Abstract
The transient characteristics of the dark current have been measured in SbI3-doped HgI2 single crystals as a function of voltage and temperature for different dopant concentrations. The doping by Sb3+ was found to introduce a hole trapping level 0.5-eV deep, with a density which was of the same order of magnitude as the SbI3 content. The room-temperature effective hole mobility was 5×10−8 cm2/V s for 1.5 wt.% dopant content, as compared to about 2×10−6 cm2/V s for 0.1 wt.% dopant content. Previous results obtained with undoped crystals showed an effective mobility of 5×10−7 cm2/V s, but the trap depth was different, 0.7 eV, and the concentration was much lower, only of the order of 1015 cm−3.
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