Abstract
Mesa-structure superlattice avalanche photodiodes (SL-APDs) were fabricated using three different passivation materials, benzocyclobutene (BCB). polyimide and SiN/sub x/. The best dark current was from BCB passivated devices with a mesa-diameter of 30 /spl mu/m was 38 nA when operated, approximately a factor of 10 improvement compared with other reports.
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