Abstract
Previous studies of p-type Hg1−xCdxTe indicate that diffusion is the dominant dark current mechanism for material with a 10 μm spectral cutoff (x=0.225) at 77 K [J. P. Omaggio, IEEE Trans. Electron Dev. 37, 141 (1990)]. This work demonstrates a 10X reduction of diffusion current in p-type HgCdTe upon thinning to a 10 μm thickness. Charge transient measurements applied to metal–insulator semiconductor (MIS) structures were used to determine dark currents over a temperature range of 40–110 K and electric fields of 0.5–1.4 V/μm for thick/thin pairs of p-type HgCdTe slices. Emperical fits to dark current measured in thick and thinned sister slices are compared to theoretical expressions for diffusion and tunnel current mechanisms.
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