Dark current of infrared photodetectors based on armchair graphene nanoribbons

Abstract

Armchair graphene nanoribbons (A-GNRs), an alternative material for infrared (IR) photodetectors, attract more attention because of their tunable energy gap by changing the width and number of layers and inducing a transverse electric field on the structure. In this paper, we study the dark current of IR photodetectors based on A-GNRs and its dependence on gate voltage, width of nanoribbon and temperature. The obtained results show that the dark current increases by increasing the temperature. Also, for narrow A-GNRs the dark current increases by increasing the gate voltage and for wider A-GNRs decreases by increasing the gate voltage.