Abstract
This paper reports the dark current characteristics of SWIR and MWIR p–i–n photodiodes with type-II InGaAs/GaAsSb multiple quantum wells as the absorption region. A bulk based model with the effective band gap of the type-II quantum well structure has been used. We investigated the dark current contributing mechanisms that are limiting the electrical performance of these photodiodes. The quantitative simulation of the I–V characteristics shows that the performance of InGaAs/GaAsSb photodiodes is dominated by generation-recombination component at the temperature between 200 and 290 K for reverse biases below 5 V. Trap-assisted tunneling current and direct tunneling current begin to dominate when the reverse bias is higher than 10 V.
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