Abstract
Abstract We present the dark current performance of the SAPHIRA series of HgCdTe APD arrays, characterized as a function of bias voltage and temperature. We measure a gain-normalized dark current in multiple SAPHIRA arrays of from unity gain ( ) up to an avalanche gain of ∼5 ( ). Under a restricted subarray and long exposures, we set an implied upper limit on intrinsic dark current in the SAPHIRA of . These values are still dominated by glow, NIR illumination generated by the readout integrated circuit.
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