Abstract
A midwave infrared pin photodiode based on a type II InAs/GaSb superlattice (SL) was fabricated, and electrical measurements under dark conditions were performed as a function of temperature. The SL structure exhibits photoluminescence emission at 4.55 μm at 77 K. Deduced from current density–voltage (J–V) measurements, a zero-bias resistance–area product R0A greater than 1 × 106 Ω cm2 at 77 K was measured. Additional noise measurements show no presence of intrinsic 1/f noise above 20 Hz, and the photodiode presents Schottky-limited behavior below −600 mV. All these results confirm the potential for such SL InAs/GaSb superlattice pin photodiodes operating in the midwave infrared domain.
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