Abstract

Thin films of ZnTe are prepared under different conditions by a vacuum evaporation technique. Dark- and photoconductivity and measured at different temperatures. The effect of doping on conductivity is studied for BaF2 (7 wt.%), PbCl2 (6 wt.%) and In (6 wt.%) dopants. The spectral response of photoconductivity are intensity variation of photocurrent in ZnTe films of different thickness is studied. The mechanism of conduction in those films is properly explained by considering different models. The variation of drift barrier height with film thickness, and hence the particle size, is studied. An exponential distribution of traps or impurity states within the bands is suggested for the films.

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