Abstract
Spin relaxation of the dangling-bond defect in undoped plasma-deposited amorphous silicon has been studied using several electron-spin-resonance methods based on finite magnetic-field-modulation frequency effects. Spin-lattice relaxation (${T}_{1}$) processes alone do not account for the observations. Possible origins of the anomalous spin relaxation in spectral diffusion processes are discussed. Anomalous relaxation gives an additional signature of the dangling-bond defect which varies with deposition conditions. Solutions to Bloch's equations for inhomogeneous spin systems at finite magnetic-field-modulation frequency are given, and a general relationship between modulation-frequency effects in conventional ESR and electron-electron double-resonance measurements is established.
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