Abstract
The damping of crystallization waves at the solid-liquid interface of 4He has been systematically studied with 3He concentrations from 0.3 to 158 ppb at temperatures below 0.5 K. At the higher concentrations of 3He, we observe that the growth resistance, ( Km) -1, increases exponentially with increasing temperature. This exponential temperature dependence is consistent with 3He diffusing in the region of the moving interface.
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