Abstract
In this work, we present MOS capacitors and field effect transistors with a crystalline gadolinium oxide (Gd 2O 3) gate dielectric and metal gate electrode (titanium nitride) fabricated in a gentle damascene gate last process. Details of the gate last process and initial results on MOS devices with equivalent oxide thicknesses (EOT) of 3.0 nm and 1.5 nm, respectively, are shown.
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