Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma

M Yanagisawa,H Ogawa,Y Horiike

doi:10.1109/imnc.2000.872759

Damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma

M Yanagisawa, H Ogawa + Show 1 more

https://doi.org/10.1109/imnc.2000.872759

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Publication Date: Jul 11, 2000

Citations: 2

Affiliation: The University of Tokyo

#Chemical Dry Etching #Technology Of Wafer + Show 8 more

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Abstract

This paper reports a new damage-free flattening technology of large diameter Si wafer employing numerically controlled local SF/sub 6//H/sub 2/ downstream plasma based on CDE (chemical dry etching) and diseases the dirty texture formation mechanism of the etched Si wafer surface.

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