Damage studies on the system $$^{111} \mathop {In}\limits^ \to \underline {Ni}$$

Abstract

Lattice damage after implantation of111In in Ni has been studied applying the DPAC technique to the 171–245 keV γ-ray cascade in the daughter nucleus111Cd. Implantations were carried out at 10 K and at 300 K. The low temperature implantation yields a higher regular substitutional fraction (80%) than the room temperature implantation (40%). The annealing behaviour of both implants above RT is the same. In addition, two distinct defect-associated sites were observed in isochronal annealing sequences. A microscopic model for these defects is presented, which takes into account magnetic and electric hyperfine interaction strengths, binding energies and site populations as a functions of temperature.