Abstract
A detailed experimental analysis of self-anneal and post-anneal phenomena in heavily arsenic-implanted silicon has clarified the role of the beam current in the ion implantation process. Current effects, which are more evident the higher the implant current, consist of an increase in temperature during the implant and lead to the formation of (1) a heavily damaged crystalline bulk layer, which cannot be further reconstructed by successive heat treatments performed at moderate temperature (lower than 800°C), and (2) a partially reconstructed surface layer, the quality of which can be increased by post-annealing treatments. Both carrier mobility and dopant activation are significantly reduced in the highly damaged bulk region.
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