Abstract
AbstractDamage in single crystal ß-SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering (RBS) and cross-section transmission electron microscopy (X-TEM). Samples were implanted with 123 keV 27Al at liquid nitrogen temperature. RBS spectra for He channeling in the (110) axis at 45° were obtained as a function of implantation dose to determine damage accumulation. X-TEM was used to characterize damage structure for selected doses. The surface of the SiC becomes amorphous for doses greater than 1 x 1015 /cm 2. At lower doses, significant uniaxial lattice strain along the (100) direction is suggested by comparison of RBS channeling spectra obtained for several high index axes. High resolution TEM on a sample implanted at 4 x 1014 /cm2 shows no damage structure in the surface region; lattice damage in a broad layer centered roughly at the depth of highest energy deposition is characterized by small amorphous pockets in a crystalline matrix. Qualitatively similar backscattering results were obtained for other elements implanted at room and liquid nitrogen temperature.
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