Damage introduction in InGaP by electron cyclotron resonance Ar plasmas

Abstract

Changes in sheet resistance of n- and p-type InGaP exposed to electron cyclotron resonance Ar plasmas have been used to measure the introduction of ion-induced damage. p-type material is much more resistant to change in its conductivity than n-type InGaP, indicating that electron traps are the predominant entity produced by the ion bombardment. For short (∼1 min) plasma exposures the ion current is more important than ion energy in producing resistance changes. Annealing of damage in both conductivity types occurs with an activation energy of ∼3.4±0.5 eV.