Damage Effects in Boron and BF 2 Ion‐Implanted p+‐n Junctions in Silicon

Abstract

Boron‐ and p+‐n junctions are compared. At 50V reverse bias diodes, fabricated in <100> silicon and annealed in a wet atmosphere, typically exhibited two orders of magnitude lower leakage than B‐implanted diodes on the same wafer. The improved reverse I–V characteristics of the junctions are related to the implant damage. Excessive leakage current in B‐implanted diodes is correlated with oxidation‐induced defects using scanning electron microscopy. Argon damage implant experiments indicate that an amorphous surface region caused by the implant prevents the propagation of defects into the junction region during anneal in a wet oxygen atmosphere.