Damage distributions in LiNbO 3 crystal induced by MeV F + tilted implantations

Abstract

X-cut LiNbO 3 crystals have been implanted by 0.8, 1.0 and 1.2 MeV F + tilted at angles of 15°, 45° and 60° with doses of 5 × 10 14, 7 × 10 14 and 5 × 10 14 ions/cm 2, respectively. The Rutherford backscattering (RBS)/channeling technique was used to investigate the induced damage distributions. The damage profiles were deconvoluted from the measured spectra after considering the energy spread due to the different stopping power of channeled and nonchanneled ions. Good agreements were obtained between the measured damage profiles and the calculated defect profiles by TRIM'90 (transport of ions in matter, version 1990), except that the measured damage concentration was enhanced in the near-surface region. Information on the lateral and longitudinal damage spread in LiNbO 3 crystals was obtained from the damage profiles induced by tilted ion implantations and compared with TRIM'90 calculation.