Abstract
Damage density profiles are measured in ion implanted silicon. The correlation of quantitative damage density measured by Rutherford backscattering spectrometry with photo-thermal displacement (PAD) is found. However, it is not obtained in photo-thermal reflectance variation (thermal wave) measurement. The damage density profile can be measured at the damaged surface with repeated measurement and removal of the surface by the PAD. The damage density by this technique is quantitative and the profile corresponds well with the one obtained by Monte Carlo simulation.
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