Abstract
The effect of laser irradiation on triple-junction GaAs cells studied via cell irradiation experiments was carried out using a continuous-wave laser with a wavelength of 808 nm. In the experiments, a thermal imaging system was used to measure the surface temperature of the cell, and the surface morphology of the irradiated cell was analyzed. The output performance of the irradiated cell was measured by a source meter, and the results show that the change rate of cell surface temperature increased with increasing laser power density. When the cell damage intensifies, the output characteristics of the cell gradually decay, and the cell loses its photoelectric effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
