Abstract
A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.
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