Damage analysis and engineering for ion implantation in ULSI process

Abstract

To evaluate damaged silicon crystals, as implanted or after annealing in ULSI process, transmission electron microscopy (TEM), thermal wave, and scanning Raman microscopy techniques provide complementary methods for the detection of crystal lattice imperfections. Depth profile analysis using anodic oxidation-HF etching techniques, have also been developed for damage characterization. A new technique by combination of the anodic oxidation-HF etching and an atomic force microscopy (AFM) techniques is very suitable for the observation of the structure and distribution of the secondary defects. By using these damage characterization methods, clear understanding and effective prevention of the critical damage during ion implantation hold great promise for ULSI manufacturing.