Abstract

Undoped indium oxide films with room temperature d0 ferromagnetism were prepared by radiofrequency magnetron sputtering with different O2/Ar flux ratio. The optical and magnetic properties changed non-monotonously as the oxygen flux increases. A conversion of conductivity from n-type to p-type was observed as the flux ratio reached 15:15. The concordant results in structural, electrical, optical, and magnetic properties suggest that single ionized oxygen and indium vacancies play crucial roles in mediating the ferromagnetism in n and p-type In2O3 films, respectively.

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