Abstract
Compounds were prepared from In2O3 doped SnO2 with different doping ratio by mixing and sintering at 1000oC. Pulsed Laser Deposition PLD was used to deposit thin films of different doping ratio In2O3: SnO2 (0, 1, 3, 5, 7 and 9 % wt.) on glass and p-type wafer Si(111) substrates at ambient temperature under vacuum of 10-3 bar thickness of ~100nm. X-ray diffraction and atomic force microscopy were used to examine the structural type, grain size and morphology of the prepared thin films. The results show the structures of thin films was also polycrystalline, and the predominate peaks are identical with standard cards ITO. On the other side the prepared thin films declared a reduction of degree of crystallinity with the increase of doping ratio. Atomic Force Microscopy (AFM) measurements show the average grain size exhibit to change in non-systematic manner with the increase of doping ratio with tin oxide. The average grain size increases at doping ratios 1, 5 and 7 % from 52.48 to 79.12, 87.57, and 105.59 nm respectively and decreases at residual doping ratio. The average surface roughness increases from 0.458 to 26.8 nm with the increase of doping ratio. The gas sensing measurements of In2O3:SnO2 thin films prepared on p-Si to NO2 gas showed good sensitivity and Maximum sensitivity (50) obtained for In2O3:SnO2 prepared on p-Si at operating temperature 573 K and doping ratio 7 % and 9 %. Maximum speed of response time (8 sec) at operating temperature 573 K and doping ratio 1 %.
Highlights
One of the most important semiconductors is the so-called transparent conductive oxides (TCO), which are compound semiconductors composed of Oxygen combined with metal (i.e semiconductor oxides)
Most research on TCO materials has been focused on the above oxides, there have been some efforts on making multicomponent oxides to improve the electrical conductivity and optical transparency of the films, such as In2O3-ZnO, In2O3-SnO2, Ga2O3-In2O3 [2]
The current research devoted with preparation of ITO films by PLD on glass substrate and The morphology, structural and composition analysis of ITO films were examined and the sensing properties of un-doped In2O3 and doped with different concentrations (1, 3, 5, 7 and 9) % of SnO2 films deposited on p-type silicon wafer(111) are examined as a function of operating temperature and time to find the temperature dependence of the sensitivity for oxidizing gas (NO2)
Summary
One of the most important semiconductors is the so-called transparent conductive oxides (TCO), which are compound semiconductors composed of Oxygen combined with metal (i.e semiconductor oxides). Most research on TCO materials has been focused on the above oxides, there have been some efforts on making multicomponent oxides to improve the electrical conductivity and optical transparency of the films, such as In2O3-ZnO, In2O3-SnO2, Ga2O3-In2O3 [2]. The current research devoted with preparation of ITO films by PLD on glass substrate and The morphology, structural and composition analysis of ITO films were examined and the sensing properties of un-doped In2O3 and doped with different concentrations (1, 3, 5, 7 and 9) % of SnO2 films deposited on p-type silicon wafer(111) are examined as a function of operating temperature and time to find the temperature dependence of the sensitivity for oxidizing gas (NO2). The resistivity of pure In2O3 and In2O3:SnO2 thin films with different composition ratios prepared on glass substrate estimated by DC measurements after depositing metal electrodes (Al) on the samples using appropriate masks.
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