Abstract
We report on chemical vapour deposition growth of nanocrystalline (grain size 30–50 nm) diamond films of 100 nm to 2 μm thickness in methane-rich mixtures. A d.c. arc discharge in CH4H2Ar gas mixtures with a methane percentage CH4(CH4 + H2) varied from 10% to 100% was used for diamond deposition on Si substrates seeded with ultrafine (5 nm) diamond particles. The films obtained were characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and X-ray excited Auger electron spectroscopy. Remarkably well-crystallized diamond films were produced even in hydrogen-free gas mixtures. Raman spectra confirmed the nanocrystalline structure of all the films examined. The film hardness measured with a nanoindenter was in the range 70–85 GPa typical for diamond, the highest values corresponding to 100% methane content. The films were very smooth with surface roughness Ra < 20 nm. The essential improvement in surface smoothness was obtained by means of laser-induced disintegration of coalesced seeding particles.
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