Abstract
A subharmonically pumped finline mixer applying a silicon planar doped barrier diode has been developed for D-band frequencies. Diode processing and DC characteristics are discussed, and a circuit description is given. Excellent mixing properties (minimum conversion loss) of 10.8 dB) favor this mixer configuration for application in low-cost receivers operating at those RF bands (above 120 GHz) where fundamental low-noise, solid-state oscillators are not currently available. >
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