Abstract
The importance of Czochralski (CZ) grown silicon as a basic material for solid-state electronics is outlined. After that, a short review is given of the different possibilities for growing silicon crystals and the history of Czochralski technique. Details of the CZ pulling procedure are discussed. The different aspects of the process like starting material, crucible problems, heat and melt flow conditions, interface reactions, as well as incorporation and distribution of impurities in the crystals are considered. Examples are given of typical and exceptional impurity distributions. Oxygen is of supreme importance in CZ-Si and is dealt with in greater detail. Its origin, typical concentrations and distributions, and its influence on crystal quality are described. Finally, the technical aspects of current CZ-Si growth are outlined and the mechanical designs of the pulling apparatus, including recharging equipment, are illustrated.
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