Abstract
Abstract Twin- and crack-free single crystals of (La,Sr)(Al,Ta)O3 with mixed-perovskite structure have been grown using the Czochralski method. These new crystals with a typical size of 55 mm in diameter and 50 mm in length are potential substrate candidates for growing large size and epitaxial HTS and GaN films. Their dielectric constant and dielectric loss at room temperature are 23 and 1×10−4, respectively.
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