Abstract
This paper presents experimental results of laser modification of the surface of monocrystalline silicon under the influence of a double femtosecond laser pulse with varying delays less than or close to the electron–phonon interaction time, as well as the results of numerical simulation of the photoexcitation of a semiconductor in the approximation of dielectric constant. It is shown that the excitation of cylindrical surface waves not only precedes the excitation of plane surface electromagnetic waves, but is also a determining factor in the cumulative change in the dielectric constant of the medium and the creation of conditions for the excitation of plane surface electromagnetic waves.
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