Abstract
We have studied the cyclotron resonance of electrons and holes in various types of InMnAs-based structures at ultrahigh magnetic fields. Our observations, in conjunction with an eight-band effective mass model including the s–d and p–d exchange interactions with Mn d-electrons, unambiguously suggest the existence of s-like and p-like delocalized carriers in all samples studied. The samples studied include Paramagnetic n-type In1−xMnxAs films (x ∼ 0.12) grown on GaAs, ferromagnetic p-type In1−xMnxAs films (x ∼ 0.025) grown on GaAs with Curie temperatures (TC) > 5 K, paramagnetic n-type In1−xMnxAs/InAs superlattices, ferromagnetic p-type In1−xMnxAs/GaSb heterostructures (x ∼ 0.09) with TC = 30-60 K, and ferromagnetic (In0.53Ga0.47)1−xMnxAs/In0.53Ga0.47As heterostructures (x ∼ 0.05) grown on InP with TC up to 120 K.
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