Cyclotron resonance of electron inversion layers in Si (001) metal-oxide-semiconductor field-effect transistors (MOSFET's)

Abstract

Cyclotron-resonance experiments on inversion-layer electrons in a series of large gate area Si metal-oxide-semiconductor field-effect transistors (MOSFET's) have been performed with a submillimeter laser system in conjunction with high-field Bitter-type magnets. The parameters determined from fits to the experimental magnetotransmission data, cyclotron effective mass and scattering time, have been studied as functions of laser wavelength, resonant magnetic field, inversion-layer density, temperature, and depletion charge. Results exhibit consistent and systematic behavior from sample to sample as functions of these various parameters. There are two distinct regions of density with different physical behavior. In both the high-density (metallic) and low-density (localized) regimes the experimental results appear to be influenced largely by electron-electron interactions. A transition region between these two extremes also exhibits distinctive behavior. These results are compared with other work, and possible explanations are discussed.