Abstract
The influence of the interface states on the cyclotron resonance (CR) of the broken-gap two carrier InAs/GaSb DHET system has been investigated. Enhanced coupling between electron and hole levels is observed in the samples with a monolayer of InSb formed at one of the interfaces, leading to evidence of strong interband transitions close to that of the electron CR. This is believed to be the result of the asymmetry introduced into the structure. The results are consistent with the theoretical analysis from self-consistent k·p calculations.
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