Abstract
Cyclotron resonance and inter-subband excitation experiments have been performed on superlattices of the semimetallic, strained type II system InAs/(Ga,In)Sb. We observe simultaneously one cyclotron resonance from the 2D electrons located in the InAs and two resonances from the 2D holes in the (Ga,In)Sb layers. The two hole resonances originate from the M J = ¦ 3 2 > states. We have found a strong crystallographic anisotropy in the hole masses between structures grown along [001] and [111]A orientations attributed to the strain decoupling of the heavy and light hole levels in the GrmGa 1- x In x Sb valence band. In addition, we demonstrate for the first time that intersubband resonances can be directly seen for the electrons at large tilt angles.
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