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Abstract
We have investigated the synthesis and the thermal decomposition of cyclohexylphosphine and its application to the metalorganic vapor-phase epitaxy of InP. Cyclohexylphosphine is a liquid compound with a 20°C vapor pressure of 7.2 hPa. The thermal decomposition reaction is detected at temperatures as low as 400°C. By conducting coupled experiments of thermolysis and mass spectrometry the formation of PH n species can be proven. Details of the decomposition pathways are given. InP layers with good surface morphologies could be grown at atmospheric pressure and at substrate temperatures between 500°C and 560°C. The surface morphology reflects the role of PH n and P 2/P 4 species during the growth process.
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