Cyclic Voltammetry Measurement for Cu2O Based Homostructure Thin Film

Abstract

This experiment is about fabrication of homojunction Copper Oxide (Cu2O) thin film by using electrodeposition method. The p-n homojunction Cu2O was successfully prepared by consecutively depositing p-type Cu2O layer on n-type Cu2O layer by using copper acetate based solution through potentiostatic electrodeposition. At first, the n-type Cu2O was fabricated at pH 6.2 and 6.5 with fixed potential of -0.125V vs Ag/AgCl and time deposition at 30 minutes. Cyclic voltammetry (CV) measurement was carried out on this sample to determine the ideal potential range for fabrication of p-type Cu2O on n-type Cu2O/FTO substrate. From the result, deposition potential of -0.35V and -0.4V vs Ag/AgCl were appropriated for p-type Cu2O thin film fabrication. These potential values were variable with the selected pH values of 12.0 and 12.5 to fabricate the p-type Cu2O thin film. The other parameters such as deposition time fixed at 2 hours bath temperature was set up at 60°C. It was found that the optimum potential deposition was -0.4V vs Ag/AgCl and pH value appropriate for homostructure Cu2O thin film was pH 12.5. Morphological, structural, optical and conductivity characterization of p-n homojunction Cu2O thin film was characterized using Field Emission Scanning Electron Microscopy, X-Ray Diffractometer, Ultraviolet-Visible Spectroscopy and Photoelectrochemical (PEC) cells, respectively.