Abstract
We report the advantage of raised-pressure metalorganic chemical vapor deposition (RP-MOCVD) and the room-temperature (RT) continuous-wave (CW) operation of AlGaInN–GaN laser diodes grown at 1.6 atm. Improvement of the crystalline quality by increasing the growth pressure was verified by measuring the optical pumping threshold-power density and etch-pit density. Furthermore, we succeeded in the first RT-CW operation of buried-ridge laser diodes where the ridge region was buried by a partially crystallized layer of Al0.6Ga0.4°C, cracks in the AlGaN burying layer can be prevented. The 4 μm wide buried-ridge laser operated under CW conditions, with an output power up to 30 mW. The threshold current was 165 mA, corresponding to a threshold current density of 4.1 kA/cm2, and the operating voltage at the threshold was 9.0 V.
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