Abstract
Measurements of the temperature dependence of beta and V/sub BE/ were made on AlGaAs-GaAs HBTs and used to determine device thermal resistance. The measurements were CW and not switched or pulsed in order to have a simpler procedure. With base doping greater than 10/sup 19/ cm/sup -3/, HBTs have negligible base-width modulation (i.e., flat I/sub C/ versus V/sub CE/ characteristics) which makes CW thermal resistance measurement especially direct and simple.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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