Abstract
CW-IMPATT diodes for W-band operation are fabricated from Silicon Molecular Beam Epitaxy material. Using different preparation techniques, the active layer of single drift structures is grown at 750 °C and 550 °C. Doping is performed by molecular beams from Sb (n-type) or Ga (p-type) effusion cells. The influence of the p+-doping level on the series resistance of the diode is investigated. Measurements of efficiency as a function of the active region data deliver fine design rules. The output power is 450 mW at 87 GHz from diodes mounted in a hermetically sealed package on a diamond heat sink.
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