Abstract
We report efficient laser operation at 1.5-1.6 μm in an Er,Yb:YCOB laser. The maximum output power of 110 mW was achieved in a hemispherical cavity with a slope efficiency of 20%. We also report 100 mW of output in a flat-flat cavity configuration, and the first report of operation of this type of laser crystal in a true microchip arrangement with >10-mW output.
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