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Abstract
The basic properties of silicon carbide thin films prepared by plasma-enhanced chemical vapor deposition using silicon tetrachloride were studied. It was found that the films prepared at the substrate temperature of higher than 700°C were polycrystalline, and the grain size of about 20nm was obtained for the films prepared at the substrate temperature of 800°C. The stoichiometric silicon carbide films showed n type conduction, while the carbon rich silicon carbide films showed p type conduction. Hall mobility and the carrier concentration were about 20cm2/V•sec and 2×1017cm-3, respectively for the stoichiometric films prepared at the substrate temperature of 800°C. Thermoelectromotive force of silicon carbide films was measured and thermoelectric power, the sensitivity as sensor, was about 50μV/deg.
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