Abstract
We have confirmed the new method of probe measurement in N2/SiH4 plasma. Using this method, we have measured the spatial distribution of plasma parameters such as electron temperature Te, electron density ne, plasma space potential Vs, floating potential Vf and sheath voltage Vs-Vf with varying the gas flow rate of SiH4 in the chamber of the double tubed coaxial line type microwave plasma CVD (MPCVD) system. In this paper, we report the spatial distribution of these plasma parameters in the chamber of this MPCVD system. And it is cleared that the plasma is very uniform in the chamber.
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