Abstract
This paper describes the growth of tubular polycrystalline 3C-SiC samples by chemical vapor deposition (CVD). The use of propionitrile as a precursor for nitrogen doping ensures the growth of polycrystalline 3C-SiC layers with a 1000°C resistivity of 0.1–0.2 Ω cm and zero temperature coefficient of resistance. Such 3C-SiC tubes can be used as silicon carbide electric heaters.
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